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850nm InGaAs PIN-TIA-Detector

850nm InGaAs PIN-TIA-Detector

 

Feature

High sensitivity

Trans-impedance amplifier

850nm GaAs PIN

4-pin package

 

Application

Fiber Optical communication

Fiber Optical sensors

Instruments & Equipment

 

Absolute Maximum Ratings

Parameter

Symbol

Min.

Max.

Unit

Test conditions

Storage temperature

Tstg

-40

+100

-

Operating temperature

Top

-40

+85

-

Storage Relative Humidity

RHs

-

95

%

-

Lead Solder Temperature

Tsl

-

260

-

Lead Solder Duration

Dsl

-

10

S

-

 

Optical & Electrical Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Supply Voltage

Vcc

3.0

-

5.5

V

-

Supply Current

Icc

-

23

35

mA

No load

Wavelength

 

750

-

900

nm

VR=5V, λ=1310nm

Saturation Power

Ps

-3

-

-

dBm

850nm 150M

Bandwidth

BW

115

125

-

MHz

-3dB

Sensitivity

S

-

-36

-34

 

I=850nm, 155Mbps, 62.5um

BER=10-10@PRBS=233-1

Rise/Fall time

Tr/tf

-

-

4.2

ns

Λ=850nm (20-80%)

 

 

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