Parameter

Symbol

Min

Max

Unit

Condition

Operating Case Temperature

Tc

-20

65

°C

I=Iop

Storage Temperature

Tstg

-40

85

°C

--

Laser Forward Current

If

--

120

mA

--

Laser Reverse Bias

Vr

--

2

V

--

Photodiode Reverse Bias

Vrpd

--

10

V

--

TEC Current

Itec

1.5

A

-20 °C < Tc <+65 °C,

Lead Solder Temperature

-

-

260

°C

-

Lead Soldering Time

-

-

10

S

-

Fiber bend radius

-

30

-

mm

-

Fiber yield strength

-

-

1

kgf

-

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions

Center Wavelength

λ_c

1530

1550

1570

nm

CW

Spectral Width (-20 dB)

Δλ

--

0.1

1.0

nm

CW

Optical Output Power*

P_o

2

--

16

mW

CW, T_L=25 °C

Optical Isolation

I_S

30

--

--

dB

T=25 °C

Side-mode Suppression Ratio

SMSR

30

--

--

dB

CW

Threshold Current

I_th

--

9

15

mA

T_L=25 °C

Operating Current

I_op

--

--

120

mA

CW

Forward Voltage

V_F

--

1.2

2.0

V

CW

Monitor Current

I_mon

100

--

1500

μA

V_rpd=5 V

Monitor Dark Current

I_D

--

--

50

nA

V_rpd=5 V

Operating Case Temperature

T

-20

--

65

°C

Tracking Error

γ

-0.5

--

0.5

dB

TE=10log(Po(Tc)/Po(25°C)

Thermistor Resistance

R_t

9.5

--

10.5

KΩ

T=25 °C

TEC Current

I_C

--

--

1.0

A

ΔΤ=40°C

TEC Voltage

V_C

--

--

2.0

V

ΔΤ=40°C

Carrier Noise Ratio

CNR

51

dB

84 CH, PAL

Composite Second Order

CSO

-60

-57

dBc

84 CH, PAL

Composite Triple Beat

CTB

-67

-65

dBc

84 CH, PAL

Frequency range

F

45

870

MHz

-

Pin

Description

Pin

Description

1

Thermistor

8

Ground

2

Thermistor

9

Ground

3

LD (N) bias

10

Ground

4

Detector (P)

11

LD (P), ground

5

Detector (N)

12

LD (N), RF modulation

6

TEC (+)

13

LD (P), ground

7

TEC (-)

14

Ground